1. All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions. (29th January 2021) Authors: Hasan, Syed M N; Gunning, Brendan P; J.-Eddine, Zane; Chandrasekar, Hareesh; Crawford, Mary H; Armstrong, Andrew; Rajan, Siddharth; Arafin, Shamsul Journal: Journal of physics Issue: Volume 54:Number 15(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Carrier Transport in Graphene Field‐Effect Transistors on Gated Polar Nitride Substrates. Issue 16 (9th June 2020) Authors: Balasubramanian, Krishna; Chandrasekar, Hareesh; Raghavan, Srinivasan Journal: Physica status solidi Issue: Volume 217:Issue 16(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates. (12th July 2020) Authors: Chandrasekar, Hareesh; Razzak, Towhidur; Wang, Caiyu; Reyes, Zeltzin; Majumdar, Kausik; Rajan, Siddharth Journal: Advanced Electronic Materials Issue: Volume 6:Number 8(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Electron mobility in few-layer MoxW1-xS2. (7th September 2015) Authors: Chandrasekar, Hareesh; Nath, Digbijoy N Journal: Materials research express Issue: Volume 2:Number 9(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Estimation of background carrier concentration in fully depleted GaN films. (16th October 2015) Authors: Chandrasekar, Hareesh; Singh, Manikant; Raghavan, Srinivasan; Bhat, Navakanta Journal: Semiconductor science and technology Issue: Volume 30:Number 11(2015:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices. (31st January 2019) Authors: Middleton, Callum; Chandrasekar, Hareesh; Singh, Manikant; Pomeroy, James W.; Uren, Michael J.; Francis, Daniel; Kuball, Martin Journal: Applied physics express Issue: Volume 12:Number 2(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density. (25th May 2016) Authors: Krishna Bharadwaj, B; Chandrasekar, Hareesh; Nath, Digbijoy; Pratap, Rudra; Raghavan, Srinivasan Journal: Journal of physics Issue: Volume 49:Number 26(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS2 FETs. (14th December 2016) Authors: Bhattacharjee, Shubhadeep; Ganapathi, Kolla Lakshmi; Chandrasekar, Hareesh; Paul, Tathagata; Mohan, Sangeneni; Ghosh, Arindam; Raghavan, Srinivasan; Bhat, Navakanta Journal: Advanced Electronic Materials Issue: Volume 3:Number 1(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Physical design guidelines to minimize area-specific ON-resistance for rated ON-current and breakdown voltage of GaN power HEMTs. (1st March 2023) Authors: Khan, Md Arif; Muralidharan, Rangarajan; Chandrasekar, Hareesh Journal: Semiconductor science and technology Issue: Volume 38:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Spotting 2D atomic layers on aluminum nitride thin films. (1st October 2015) Authors: Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan, Journal: Nanotechnology Issue: Volume 26:Number 42(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗