Author/Creator: Chandan, Greeshma - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Chandan, Greeshma

1. Growth and Characterization of a-plane In0.2Ga0.8N/ GaN hetrostructures on r-Sapphire. Issue 1736 (19th December 2014)

Authors:: Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Roul, Basanta; S.B.Krupanidhi,
Editors:: Kaplar, R.; Meneghesso, G.; Ozpineci, B.; Takeuchi, T.
Journal:: MRS proceedings
Issue:: Issue 1736:(2015)
Page Start:
Record Type:: Journal Article
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2. Growth and Characterization of a-plane In0.2Ga0.8N/ GaN hetrostructures on r-Sapphire. Issue 1736 (19th December 2014)

Authors:: Kaplar, R.; Meneghesso, G.; Ozpineci, B.; Takeuchi, T.; Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Roul, Basanta; S.B.Krupanidhi
Journal:: MRS proceedings
Issue:: Issue 1736:(2015)
Page Start:
Record Type:: Journal Article
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3. Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE. (January 2015)

Authors:: Sinha, Neeraj; Roul, Basanta; Mukundan, Shruti; Chandan, Greeshma; Mohan, Lokesh; Jali, V.M.; Krupanidhi, S.B.
Journal:: Materials research bulletin
Issue:: Volume 61(2015:Jan.)
Page Start:: 539
Record Type:: Journal Article
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4. Photodetection Properties of Nonpolar a‐Plane GaN Grown by Three Approaches Using Plasma‐Assisted Molecular Beam Epitaxy. Issue 18 (17th July 2019)

Authors:: Pant, Rohit Kumar; Singh, Deependra Kumar; Roul, Basanta; Chowdhury, Arun Malla; Chandan, Greeshma; Nanda, Karuna K.; Krupanidhi, Saluru B.
Journal:: Physica status solidi
Issue:: Volume 216:Issue 18(2019)
Page Start:: n/a
Record Type:: Journal Article
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5. Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes. Issue 1736 (18th December 2014)

Authors:: Shetty, Arjun; Roul, Basanta; Mukundan, Shruti; Chandan, Greeshma; Mohan, Lokesh; Vinoy, K J; Krupanidhi, S B
Editors:: Kaplar, R.; Meneghesso, G.; Ozpineci, B.; Takeuchi, T.
Journal:: MRS proceedings
Issue:: Issue 1736:(2015)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

6. Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes. Issue 1736 (18th December 2014)

Authors:: Kaplar, R.; Meneghesso, G.; Ozpineci, B.; Takeuchi, T.; Shetty, Arjun; Roul, Basanta; Mukundan, Shruti; Chandan, Greeshma; Mohan, Lokesh; Vinoy, K J; Krupanidhi, S B
Journal:: MRS proceedings
Issue:: Issue 1736:(2015)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗