Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes. Issue 1736 (18th December 2014)

• Record Type: Journal Article
• Authors: Kaplar, R.; Meneghesso, G.; Ozpineci, B.; Takeuchi, T.; Shetty, Arjun; Roul, Basanta; Mukundan, Shruti; Chandan, Greeshma; Mohan, Lokesh; Vinoy, K J; Krupanidhi, S B
• Is Part Of: MRS proceedings. Issue 1736:(2015)
• Publication Date: 2014-12-18
• Subjects: Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.938
• Languages: English
• ISSNs: 0272-9172

Abstract

<abstract abstract-type="normal"> <title>ABSTRACT</title> <p>Gallium nitride (n-type) films of thickness 300nm were grown on c-plane sapphire substrates using plasma assisted molecular beam epitaxy (PA-MBE). High resolution X-ray diffraction and photoluminescence measurements were used to confirm the crystalline and optical qualities of the grown films. Metal-semiconductor Schottky diodes were fabricated using Pt as the Schottky metal and Al as the Ohmic metal contact. Metal-insulator-semiconductor Schottky diodes were also fabricated using HfO₂ (10nm) as the insulator material. Diode parameters like barrier height and ideality factor were extracted from I-V measurements. Introduction of HfO₂ as the insulator layer leads to better rectifying behavior (forward to reverse current ratio improves from 5.1 to 8.9) with a reduction in reverse leakage current (by 7.4 times), increase in barrier height (from 0.62eV to 0.74eV) and a reduction in ideality factor (from 6 to 4.1) of the Schottky diode.</p> </abstract>