Growth and Characterization of a-plane In0.2Ga0.8N/ GaN hetrostructures on r-Sapphire. Issue 1736 (19th December 2014)

• Record Type: Journal Article
• Authors: Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Roul, Basanta; S.B.Krupanidhi,
• Editors: Kaplar, R.; Meneghesso, G.; Ozpineci, B.; Takeuchi, T.
• Is Part Of: MRS proceedings. Issue 1736:(2015)
• Publication Date: 2014-12-19
• Subjects: III-V, -- molecular beam epitaxy (MBE), -- nitride; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.945
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: Non-polar a-plane InGaN films were grown on a r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The growth temperature and Indium flux were varied to optimize the desired composition of In0.23 Ga0.77 N on the (11-20) a-plane GaN epilayer grown on a (1-102) r-plane sapphire substrate. The structural, morphological and optical properties of the optimized composition have been studied. It was found that highly a-axis oriented InGaN epilayers with no phase separation can be grown at 540 °C with In/Ga flux ratio of 0.72. The composition of indium incorporation in single phase InGaN films was found to be 23% as estimated by high resolution X-ray diffraction. The room temperature band gap energy of single phase InGaN layers was determined by photoluminescence measurement and found to be around 2.56 eV.