1. (Invited) Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters. (20th July 2018) Authors: von den Driesch, Nils; Stange, Daniela; Rainko, Denis; Povstugar, Ivan; Breuer, Uwe; Ikonic, Zoran; Hartmann, Jean-Michel; Schubert, Markus Andreas; Capellini, Giovanni; Sigg, Hans; Mantl, Siegfried; Grützmacher, Detlev; Buca, Dan Journal: ECS transactions Issue: Volume 86:Number 7(2018) Page Start: 189 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD. (9th November 2017) Authors: Yamamoto, Yuji; Zaumseil, Peter; Capellini, Giovanni; Andreas Schubert, Markus; Hesse, Anne; Albani, Marco; Bergamaschini, Roberto; Montalenti, Francesco; Schroeder, Thomas; Tillack, Bernd Journal: Nanotechnology Issue: Volume 28:Number 48(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Advanced GeSn/SiGeSn Group IV Heterostructure Lasers. Issue 6 (27th March 2018) Authors: von den Driesch, Nils; Stange, Daniela; Rainko, Denis; Povstugar, Ivan; Zaumseil, Peter; Capellini, Giovanni; Schröder, Thomas; Denneulin, Thibaud; Ikonic, Zoran; Hartmann, Jean‐Michel; Sigg, Hans; Mantl, Siegfried; Grützmacher, Detlev; Buca, Dan Journal: Advanced science Issue: Volume 5:Issue 6(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Alignment control of self-ordered three dimensional SiGe nanodots. (19th October 2018) Authors: Yamamoto, Yuji; Itoh, Yuhki; Zaumseil, Peter; Schubert, Markus Andreas; Capellini, Giovanni; Montalenti, Francesco; Washio, Katsuyoshi; Tillack, Bernd Journal: Semiconductor science and technology Issue: Volume 33:Number 11(2018:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy. (27th February 2017) Authors: Prieto, Ivan; Kozak, Roksolana; Skibitzki, Oliver; Rossell, Marta D; Zaumseil, Peter; Capellini, Giovanni; Gini, Emilio; Kunze, Karsten; Rojas Dasilva, Yadira Arroyo; Erni, Rolf; Schroeder, Thomas; Känel, Hans von Journal: Nanotechnology Issue: Volume 28:Number 13(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration. (1st November 2017) Authors: Taoka, Noriyuki; Capellini, Giovanni; Schlykow, Viktoria; Montanari, Michele; Zaumseil, Peter; Nakatsuka, Osamu; Zaima, Shigeaki; Schroeder, Thomas Journal: Materials science in semiconductor processing Issue: Volume 70(2017) Page Start: 139 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration. (January 2017) Authors: Taoka, Noriyuki; Capellini, Giovanni; Schlykow, Viktoria; Montanari, Michele; Zaumseil, Peter; Nakatsuka, Osamu; Zaima, Shigeaki; Schroeder, Thomas Journal: Materials science in semiconductor processing Issue: Volume 57(2016) Page Start: 48 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters. (May 2019) Authors: von den Driesch, Nils; Stange, Daniela; Rainko, Denis; Breuer, Uwe; Capellini, Giovanni; Hartmann, Jean-Michel; Sigg, Hans; Mantl, Siegfried; Grützmacher, Detlev; Buca, Dan Journal: Solid-state electronics Issue: Volume 155(2019) Page Start: 139 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001). (15th February 2017) Authors: Marzegalli, Anna; Cortinovis, Andrea; Basso Basset, Francesco; Bonera, Emiliano; Pezzoli, Fabio; Scaccabarozzi, Andrea; Isa, Fabio; Isella, Giovanni; Zaumseil, Peter; Capellini, Giovanni; Schroeder, Thomas; Miglio, Leo Journal: Materials & design Issue: Volume 116(2017) Page Start: 144 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy. (1st November 2017) Authors: Yamamoto, Yuji; Zaumseil, Peter; Schubert, Markus Andreas; Capellini, Giovanni; Salvalaglio, Marco; Montalenti, F.; Schroeder, Thomas; Tillack, Bernd Journal: Materials science in semiconductor processing Issue: Volume 70(2017) Page Start: 30 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗