Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration. (January 2017)

• Record Type: Journal Article
• Authors: Taoka, Noriyuki; Capellini, Giovanni; Schlykow, Viktoria; Montanari, Michele; Zaumseil, Peter; Nakatsuka, Osamu; Zaima, Shigeaki; Schroeder, Thomas
• Is Part Of: Materials science in semiconductor processing. Volume 57(2016)
• Page Start: 48
• Page End: 53
• Publication Date: 2017-01
• Subjects: GeSn -- Sn migration -- Mobility -- Photoluminescence; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.09.040
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Electrical and optical properties of GeSn layers formed at various growth conditions under changing deposition temperature ( T d ) and deposition speed ( v d ) were systematically investigated. A high Sn content of 3.0% leads to high electron mobility and electron concentration for an as-deposited sample compared with the Sn content of 1.9%. Subsequent annealing at 550 °C after the growth is effective for improving the mobility and the activated carrier concentration. Moreover, the high v d and T d growth makes it possible to get clear photoluminescence (PL) signal from the band-to-band transition of the GeSn layers. The annealing at 550 °C leads to the high and sharp PL spectra compared with those for the as-deposited samples. Consequently, we found that the high v d and T d growth of the GeSn layers suppressing the Sn migration is quite important for getting electrical and optical properties to realize future electrical and optical devices.