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8. Enhancement‐Mode β‐Ga2O3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing. Issue 3 (22nd December 2019)

10. High performance AlGaN/GaN HEMTs with AlN/SiNx passivation*Project supported by the National Natural Science Foundation of China (No. 60890192). (July 2015)