1. Electronic structure of (In, Mn)As quantum dots buried in GaAs investigated by soft-x-ray ARPES. (15th September 2016) Authors: Bouravleuv, A D; Lev, L L; Piamonteze, C; Wang, X; Schmitt, T; Khrebtov, A I; Samsonenko, Yu B; Kanski, J; Cirlin, G E; Strocov, V N Journal: Nanotechnology Issue: Volume 27:Number 42(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Fabrication and optical properties of Au:SiO2 nanostructured thin films. (December 2019) Authors: Ilkiv, I V; Morozov, K M; Kotlyar, K P; Amelchuk, D.; Bouravleuv, A D Journal: Journal of physics Issue: Volume 1410(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Monolith GaAsP/Si dual-junction solar cells grown by MBE. (December 2019) Authors: Sobolev, M S; Ilkiv, I V; Lazarenko, A A; Mizerov, A M; Nikitina, E V; Pirogov, E V; Timoshnev, S N; Baranov, A I; Bouravleuv, A D Journal: Journal of physics Issue: Volume 1410(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. On the stress relaxation mechanism of GaN thin films grown on Si(111) substrates. (December 2019) Authors: Koryakin, A A; Mizerov, A M; Bouravleuv, A D Journal: Journal of physics Issue: Volume 1410(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Preparation of Si substrates for monolithic integration of III−V quantum dots by selective MBE growth. (December 2020) Authors: Fominykh, N A; Sobolev, M S; Ilkiv, I V; Mokhov, D V; Berezovskaya, T N; Bouravleuv, A D Journal: Journal of physics Issue: Volume 1695(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Raman analysis of epitaxial GaN layers grown on Si (111) by PA MBE. (December 2020) Authors: Lubyankina, E A; Toporov, V V; Mizerov, A M; Timoshnev, S N; Shubina, K Yu; Bairamov, B H; Bouravleuv, A D Journal: Journal of physics Issue: Volume 1695(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Selective area epitaxy of n+-GaN layers on SiO2 patterned GaN/c-Al2O3 templates by PA MBE. (December 2019) Authors: Shubina, K Yu; Mizerov, A M; Timoshnev, S N; Mokhov, D V; Nikitina, E V; Kim, I; Bouravleuv, A D Journal: Journal of physics Issue: Volume 1410(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. The study of the AlN/Si(111) epitaxial structures grown by PA MBE via coalescence overgrowth of AlN nanocolumns. (December 2020) Authors: Shubina, K Yu; Mokhov, D V; Berezovskaya, T N; Nikitina, E V; Mizerov, A M; Bouravleuv, A D Journal: Journal of physics Issue: Volume 1695(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗