1. Bulachite, [Al6(AsO4)3(OH)9(H2O)4]⋅2H2O from Cap Garonne, France: Crystal structure and formation from a higher hydrate. (30th August 2020) Authors: Grey, Ian E.; Yoruk, Emre; Kodjikian, Stéphanie; Klein, Holger; Bougerol, Catherine; Brand, Helen E.A.; Bordet, Pierre; Mumme, William G.; Favreau, Georges; Mills, Stuart J. Journal: Mineralogical magazine Issue: Volume 84:Number 4(2020) Page Start: 608 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Chemical composition fluctuations and strain relaxation in InGaN nanowires: The role of the metal/nitrogen flux ratio. (15th November 2016) Authors: Zhang, Xin; Belloeil, Matthias; Jouneau, Pierre-Henri; Bougerol, Catherine; Gayral, Bruno; Daudin, Bruno Journal: Materials science in semiconductor processing Issue: Volume 55(2016:Nov.) Page Start: 79 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Chemical composition fluctuations and strain relaxation in InGaN nanowires: The role of the metal/nitrogen flux ratio. (15th November 2016) Authors: Zhang, Xin; Belloeil, Matthias; Jouneau, Pierre-Henri; Bougerol, Catherine; Gayral, Bruno; Daudin, Bruno Journal: Materials science in semiconductor processing Issue: Volume 55(2016:Nov.) Page Start: 79 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Circumventing the miscibility gap in InGaN nanowires emitting from blue to red. (19th September 2018) Authors: Roche, Elissa; André, Yamina; Avit, Geoffrey; Bougerol, Catherine; Castelluci, Dominique; Réveret, François; Gil, Evelyne; Médard, François; Leymarie, Joël; Jean, Theo; Dubrovskii, Vladimir G; Trassoudaine, Agnès Journal: Nanotechnology Issue: Volume 29:Number 46(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy. (25th January 2021) Authors: Hijazi, Hadi; Zeghouane, Mohammed; Jridi, Jihen; Gil, Evelyne; Castelluci, Dominique; Dubrovskii, Vladimir G; Bougerol, Catherine; André, Yamina; Trassoudaine, Agnès Journal: Nanotechnology Issue: Volume 32:Number 15(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Dopant radial inhomogeneity in Mg-doped GaN nanowires. (25th April 2018) Authors: Siladie, Alexandra-Madalina; Amichi, Lynda; Mollard, Nicolas; Mouton, Isabelle; Bonef, Bastien; Bougerol, Catherine; Grenier, Adeline; Robin, Eric; Jouneau, Pierre-Henri; Garro, Nuria; Cros, Ana; Daudin, Bruno Journal: Nanotechnology Issue: Volume 29:Number 25(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Dual‐Color Emission from Monolithic m‐Plane Core–Shell InGaN/GaN Quantum Wells. Issue 6 (30th March 2021) Authors: Kapoor, Akanksha; Grenier, Vincent; Robin, Eric; Bougerol, Catherine; Jacopin, Gwénolé; Gayral, Bruno; Tchernycheva, Maria; Eymery, Joël; Durand, Christophe Journal: Advanced photonics research Issue: Volume 2:Issue 6(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Effect of Al incorporation in nonpolar m‐plane GaN/AlGaN multi‐quantum‐wells using plasma‐assisted molecular‐beam epitaxy. Issue 9 (21st December 2016) Authors: Lim, Caroline B.; Ajay, Akhil; Bougerol, Catherine; Bellet‐Amalric, Edith; Schörmann, Jörg; Beeler, Mark; Monroy, Eva Journal: Physica status solidi Issue: Volume 214:Issue 9(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures. (26th October 2017) Authors: Lim, Caroline B; Ajay, Akhil; Lähnemann, Jonas; Bougerol, Catherine; Monroy, Eva Journal: Semiconductor science and technology Issue: Volume 32:Number 12(2017:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates. Issue 2 (29th May 2020) Authors: Zeghouane, Mohammed; André, Yamina; Avit, Geoffrey; Jridi, Jihen; Bougerol, Catherine; Coulon, Pierre-Marie; Ferret, Pierre; Castelluci, Dominique; Gil, Evelyne; Shields, Philip; Dubrovskii, Vladimir G; Trassoudaine, Agnès Journal: Nano futures Issue: Volume 4:Issue 2(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗