Circumventing the miscibility gap in InGaN nanowires emitting from blue to red. (19th September 2018)

• Record Type: Journal Article
• Authors: Roche, Elissa; André, Yamina; Avit, Geoffrey; Bougerol, Catherine; Castelluci, Dominique; Réveret, François; Gil, Evelyne; Médard, François; Leymarie, Joël; Jean, Theo; Dubrovskii, Vladimir G; Trassoudaine, Agnès
• Is Part Of: Nanotechnology. Volume 29:Number 46(2018)
• Publication Date: 2018-09-19
• Subjects: InGaN -- nanowires -- HVPE -- photoluminescence -- compositional tuning -- growth modeling; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aaddc1
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Widegap III-nitride alloys have enabled new classes of optoelectronic devices including light emitting diodes, lasers and solar cells, but it is admittedly challenging to extend their operating wavelength to the yellow–red band. This requires an increased In content x in In x Ga1− x N, prevented by the indium segregation within the miscibility gap. Beyond the known advantage of dislocation-free growth on dissimilar substrates, nanowires may help to extend the compositional range of InGaN. However, the necessary control over the material homogeneity is still lacking. Here, we present In x Ga1− x N nanowires grown by hydride vapor phase epitaxy on silicon substrates, showing rather homogeneous compositions and emitting from blue to red. The InN fraction in nanowires is tuned from x = 0.17 up to x = 0.7 by changing the growth temperature between 630 °C and 680 °C and adjusting some additional parameters. A dedicated model is presented, which attributes the wide compositional range of nanowires to the purely kinetic growth regime of self-catalyzed InGaN nanowires without macroscopic nucleation. These results may pave a new way for the controlled synthesis of indium-rich InGaN structures for optoelectronic applications in the extended spectral range.