Author/Creator: Bian, Zhaoke - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Bian, Zhaoke

1. A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings. (29th October 2021)

Authors:: Chen, Jiabo; Song, Xiufeng; Liu, Zhihong; Duan, Xiaoling; Wang, Haiyong; Bian, Zhaoke; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue
Journal:: Applied physics express
Issue:: Volume 14:Number 11(2021)
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Record Type:: Journal Article
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2. A high-voltage GaN quasi-vertical metal–insulator–semiconductor Schottky barrier diode on Si with excellent temperature characteristics. (30th June 2022)

Authors:: Song, Xiufeng; Sun, Baorui; Zhang, Jincheng; Zhao, Shenglei; Bian, Zhaoke; Liu, Shuang; Zhou, Hong; Liu, Zhihong; Hao, Yue
Journal:: Journal of physics
Issue:: Volume 55:Number 26(2022)
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Record Type:: Journal Article
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3. Corrigendum: "A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings" [Appl. Phys. Express 14, 116504 (2021)]. (1st March 2022)

Authors:: Chen, Jiabo; Song, Xiufeng; Liu, Zhihong; Duan, Xiaoling; Wang, Haiyong; Bian, Zhaoke; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue
Journal:: Applied physics express
Issue:: Volume 15:Number 3(2022)
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Record Type:: Journal Article
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4. Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures. (13th September 2021)

Authors:: Chen, Jiabo; Liu, Zhihong; Wang, Haiyong; Song, Xiufeng; Bian, Zhaoke; Duan, Xiaoling; Zhao, Shenglei; Ning, Jing; Zhang, Jincheng; Hao, Yue
Journal:: Applied physics express
Issue:: Volume 14:Number 10(2021)
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Record Type:: Journal Article
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5. Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes. (11th November 2019)

Authors:: Bian, Zhaoke; Su, Kai; Zhang, Jincheng; Zhao, Shenglei; Zhou, Hong; Zhang, Weihang; Zhang, Yachao; Zhang, Tao; Chen, Jiabo; Dang, Kui; Ning, Jing; Hao, Yue
Journal:: Journal of physics
Issue:: Volume 53:Number 4(2020)
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Record Type:: Journal Article
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6. High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2. (19th March 2019)

Authors:: Zhang, Tao; Zhang, Jincheng; Zhou, Hong; Zhang, Yachao; Chen, Tangsheng; Zhang, Kai; Wang, Yi; Dang, Kui; Bian, Zhaoke; Duan, Xiaoling; Ning, Jing; Zhao, Shenglei; Hao, Yue
Journal:: Applied physics express
Issue:: Volume 12:Number 4(2019)
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Record Type:: Journal Article
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7. High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment. (10th October 2019)

Authors:: Chen, Jiabo; Bian, Zhaoke; Liu, Zhihong; Ning, Jing; Duan, Xiaoling; Zhao, Shenglei; Wang, Haiyong; Tang, Qing; Wu, Yinhe; Song, Yuqin; Zhang, Jincheng; Hao, Yue
Journal:: Semiconductor science and technology
Issue:: Volume 34:Number 11(2019)
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Record Type:: Journal Article
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