1. (Invited) Devices in Advanced Technology Nodes: Application-Specific Characterization. (1st May 2017) Authors: Bersuker, Gennadi; Pierce, Donald G.; Veksler, Dmitry; Mason, Maribeth S. Journal: ECS transactions Issue: Volume 79:Number 1(2017) Page Start: 99 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Atomistic Modeling of the Electrical Conductivity of Single‐Walled Carbon Nanotube Junctions. Issue 8 (1st July 2022) Authors: Durrant, Thomas R.; El-Sayed, Al-Moatasem; Gao, David Z.; Rueckes, Thomas; Bersuker, Gennadi; Shluger, Alexander L. Journal: Physica status solidi Issue: Volume 16:Issue 8(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Detection of Subsurface, Nanometer‐Scale Crystallographic Defects by Nonlinear Light Scattering and Localization. Issue 16 (6th June 2021) Authors: Shafiei, Farbod; Orzali, Tommaso; Vert, Alexey; Miri, Mohammad‐Ali; Hung, Pui Yee; Wong, Man Hoi; Alù, Andrea; Bersuker, Gennadi; Downer, Michael C. Journal: Advanced optical materials Issue: Volume 9:Issue 16(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Determination of Free Electron Density in Sequentially Doped InxGa1-xAs by Raman Spectroscopy. Issue 2 (February 2015) Authors: Kort, Kenneth R.; Hung, P.Y.; Loh, Wei-Yip; Bersuker, Gennadi; Banerjee, Sarbajit Journal: Applied spectroscopy Issue: Volume 69:Issue 2(2015) Page Start: 239 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random‐Access Memories. (9th March 2015) Authors: Shi, Yuanyuan; Ji, Yanfeng; Hui, Fei; Nafria, Montserrat; Porti, Marc; Bersuker, Gennadi; Lanza, Mario Journal: Advanced Electronic Materials Issue: Volume 1:Number 4(2015:Apr.) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Interfacial Defects: Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale (Adv. Mater. 2/2018). Issue 2 (8th January 2018) Authors: Wu, Xing; Luo, Chen; Hao, Peng; Sun, Tao; Wang, Runsheng; Wang, Chaolun; Hu, Zhigao; Li, Yawei; Zhang, Jian; Bersuker, Gennadi; Sun, Litao; Pey, Kinleong Journal: Advanced materials Issue: Volume 30:Issue 2(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation?. (28th September 2015) Authors: Bradley, Samuel R; Bersuker, Gennadi; Shluger, Alexander L Journal: Journal of physics Issue: Volume 27:Number 41(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Pioneering Application of Corona Charge-Kelvin Probe Metrology to Noncontact Characterization of In0.53 Ga0.47 As/Al2O3/HfO2 Stack. Issue 1691 (24th July 2014) Authors: Savtchouk, Alexandre; D'Amico, John; Wilson, Marshall; Lagowski, Jacek; Wang, Wei-E; Kim, Taewoo; Bersuker, Gennadi; Veksler, Dmitry; Koh, Donghyi Journal: MRS proceedings Issue: Issue 1691:(2014) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale. Issue 2 (27th November 2017) Authors: Wu, Xing; Luo, Chen; Hao, Peng; Sun, Tao; Wang, Runsheng; Wang, Chaolun; Hu, Zhigao; Li, Yawei; Zhang, Jian; Bersuker, Gennadi; Sun, Litao; Pey, Kinleong Journal: Advanced materials Issue: Volume 30:Issue 2(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Switching characteristics of W/Zr/HfO2/TiN ReRAM devices for multi-level cell non-volatile memory applications. (9th June 2015) Authors: Chen, Wenbo; Lu, Wenchao; Long, Branden; Li, Yibo; Gilmer, David; Bersuker, Gennadi; Bhunia, Swarup; Jha, Rashmi Journal: Semiconductor science and technology Issue: Volume 30:Number 7(2015:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗