Pioneering Application of Corona Charge-Kelvin Probe Metrology to Noncontact Characterization of In0.53 Ga0.47 As/Al2O3/HfO2 Stack. Issue 1691 (24th July 2014)

• Record Type: Journal Article
• Authors: Savtchouk, Alexandre; D'Amico, John; Wilson, Marshall; Lagowski, Jacek; Wang, Wei-E; Kim, Taewoo; Bersuker, Gennadi; Veksler, Dmitry; Koh, Donghyi
• Is Part Of: MRS proceedings. Issue 1691:(2014)
• Publication Date: 2014-07-24
• Subjects: III-V, -- dielectric properties, -- defects; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.729
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: We report the first successful application of corona charging noncontact C-V and I-V metrology to interface and dielectric characterization of high-k/III-V structures. The metrology, which has been commonly used in Si IC manufacturing, uses incremental corona charge dosing, ΔQC, on the dielectric surface, and the measurement of surface voltage response, ΔVS, using a Kelvin-probe. Its application to In0.53 Ga0.47 As with a high-k stack required modifications related to the effects of dielectric trap induced voltage transients. The developed Corona Charge-Kelvin Probe Metrology adopted strictly differential measurements using ΔQC and ΔV, and corresponding differential capacitance rather than measurements based on total global charge, Q, and voltage, V, values. Electrical characterization data including interface trap density, electrical oxide thickness, and dielectric leakage are presented for a sample containing an In0.53 Ga0.47 As channel overlaid with a bilayer (2nm Al2 O3 /5nm HfO2 ) dielectric stack that is considered to be very promising for application in performance NFETs with high-mobility channels.