(Invited) Devices in Advanced Technology Nodes: Application-Specific Characterization. (1st May 2017)

• Record Type: Journal Article
• Authors: Bersuker, Gennadi; Pierce, Donald G.; Veksler, Dmitry; Mason, Maribeth S.
• Is Part Of: ECS transactions. Volume 79:Number 1(2017)
• Page Start: 99
• Page End: 118
• Publication Date: 2017-05-01
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07901.0099ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Scaled advanced node devices incorporate new combinations of semiconductor materials and ultra-thin multi-layer dielectric stacks. As a consequence, inter-material interactions may unpredictably affect transistor electrical characteristics and reliability. Conventional reliability tests may miss spontaneously-occurring device recovery as well as parameters shift caused by extremely high frequency circuit operations and, therefore, may underestimate or overestimate lifetime. The proposed application-specific reliability tests account for degradation processes occurring under the conditions of interest; it can also define a safe range of use conditions that may significantly extend the device lifetime beyond the conventional reliability predictions supplied by manufacturers. We present data in support of application-specific reliability testing and discuss its use in prequalification of new technologies.