Author/Creator: Baron, T. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Baron, T.

1. Benefits of XPS nanocharacterization for process development and industrial control of thin SiGe channel layers in advanced CMOS technologies. (1st November 2017)

Authors:: Fauquier, L.; Pelissier, B.; Jalabert, D.; Pierre, F.; Hartmann, J.M.; Rozé, F.; Doloy, D.; Le Cunff, D.; Beitia, C.; Baron, T.
Journal:: Materials science in semiconductor processing
Issue:: Volume 70(2017)
Page Start:: 105
Record Type:: Journal Article
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2. Chemical depth profiling and 3D reconstruction of III–V heterostructures selectively grown on non‐planar Si substrates by MOCVD. Issue 3 (23rd February 2015)

Authors:: Gorbenko, V.; Veillerot, M.; Grenier, A.; Audoit, G.; Hourani, W.; Martinez, E.; Cipro, R.; Martin, M.; David, S.; Bao, X.; Bassani, F.; Baron, T.; Barnes, J.‐P.
Journal:: Physica status solidi
Issue:: Volume 9:Issue 3(2015:Mar.)
Page Start:: 202
Record Type:: Journal Article
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3. Clinical and prognostic implications of high-sensitivity cardiac troponin T concentrations in type 2 non-ST elevation myocardial infarction. (April 2022)

Authors:: Eggers, K.M.; Baron, T.; Gard, A.; Lindahl, B.
Journal:: IJC heart & vasculature
Issue:: Volume 39(2022)
Page Start:
Record Type:: Journal Article
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4. Control of heterointerface and strain mapping in Au catalyzed axial Si-Si1-xGex nanowires. Issue 1707 (7th July 2014)

Authors:: Periwal, P.; Patriarche, G.; Latu-Romain, L.; Salem, B.; Bassani, F.; Baron, T.
Journal:: MRS proceedings
Issue:: Issue 1707:(2014)
Page Start:
Record Type:: Journal Article
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5. Digital twin design requirements in downgraded situations management. Issue 1 (2021)

Authors:: Dit Pinto, S. Camara; Villeneuve, E.; Masson, D.; Boy, G.; Baron, T.; Urfels, L.
Journal:: IFAC-PapersOnLine
Issue:: Volume 54:Issue 1(2021)
Page Start:: 869
Record Type:: Journal Article
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6. Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism. (April 2016)

Authors:: Brouzet, V.; Salem, B.; Periwal, P.; Alcotte, R.; Chouchane, F.; Bassani, F.; Baron, T.; Ghibaudo, G.
Journal:: Solid-state electronics
Issue:: Volume 118(2016)
Page Start:: 26
Record Type:: Journal Article
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7. Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism. (April 2016)

Authors:: Brouzet, V.; Salem, B.; Periwal, P.; Alcotte, R.; Chouchane, F.; Bassani, F.; Baron, T.; Ghibaudo, G.
Journal:: Solid-state electronics
Issue:: Volume 118(2016)
Page Start:: 26
Record Type:: Journal Article
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8. Indium oxide nanoparticles for resistive RAM integration using a compatible industrial technology. (February 2021)

Authors:: Guenery, P.V.; León Pérez, E.A.; Ayadi, K.; Baboux, N.; Deleruyelle, D.; Blonkowski, S.; Moeyaert, J.; Baron, T.; Militaru, L.; Souifi, A.
Journal:: Solid-state electronics
Issue:: Volume 176(2021)
Page Start:
Record Type:: Journal Article
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9. Interfacial abruptness in axial Si/SiGe heterostructures in nanowires probed by scanning capacitance microscopy. Issue 2 (28th January 2014)

Authors:: Periwal, P.; Bassani, F.; Patriarche, G.; Latu‐Romain, L.; Brouzet, V.; Salem, B.; Baron, T.
Journal:: Physica status solidi
Issue:: Volume 211:Issue 2(2014:Feb.)
Page Start:: 509
Record Type:: Journal Article
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10. Nanoscale elemental quantification in heterostructured SiGe nanowires1. Issue 18 (14th May 2015)

Authors:: Hourani, W.; Periwal, P.; Bassani, F.; Baron, T.; Patriarche, G.; Martinez, E.
Journal:: Nanoscale
Issue:: Volume 7:Issue 18(2015)
Page Start:: 8544
Record Type:: Journal Article
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