Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism. (April 2016)

• Record Type: Journal Article
• Authors: Brouzet, V.; Salem, B.; Periwal, P.; Alcotte, R.; Chouchane, F.; Bassani, F.; Baron, T.; Ghibaudo, G.
• Is Part Of: Solid-state electronics. Volume 118(2016)
• Page Start: 26
• Page End: 29
• Publication Date: 2016-04
• Subjects: Nanowire -- Tunnel Field Effect Transistors -- Vapor–liquid–solid mechanism -- Heterostructure Si/SiGe -- Electrical characterization; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.01.005
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Ω-gate TFETs based on p-Si/i-Si/n + -Si0.7 Ge0.3 NWs heterostructure grown by CVD–VLS. Ge insertion allows improving the electrical performances of TFET. The Si/SiGe TFET presents a better electrical performance than the Si TFET device. The B2BT model's parameters have been extracted for the Si0.7 Ge0.3 nanowires. Abstract: We demonstrate the fabrication and electrical characterization of Ω -gate Tunnel Field Effect Transistors (TFET) based on p-Si/i-Si/n + Si0.7 Ge0.3 heterostructure nanowires grown by Chemical Vapor Deposition (CVD) using the vapor–liquid–solid (VLS) mechanism. The electrical performances of the p-Si/i-Si/n + Si0.7 Ge0.3 heterostructure TFET device are presented and compared to Si and Si0.7 Ge0.3 homostructure nanowire TFETs. We observe an improvement of the electrical performances of TFET with p-Si/i-Si/n + Si0.7 Ge0.3 heterostructure nanowire (HT NW). The optimized devices present an Ion current of about 245 nA at V DS = −0.5 V and V GS = −3 V with a subthreshold swing around 135 mV/dec. Finally, we show that the electrical results are in good agreement with numerical simulation using Kane's Band-to-Band Tunneling model.