1. Effects of Parasitic Fractional Elements to the Dynamics of Memristor. (27th June 2019) Authors: Banchuin, Rawid Other Names: Abuelma'atti Muhammad Taher Academic Editor. Journal: Journal of electrical and computer engineering Issue: Volume 2019(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of Memreactance with Fractional Kinetics. (21st January 2020) Authors: Banchuin, Rawid Other Names: Bia Pietro Academic Editor. Journal: Mathematical problems in engineering Issue: Volume 2020(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Analytical model of inverse memelement with fractional order kinetic. (9th March 2022) Authors: Banchuin, Rawid Journal: International journal of circuit theory and applications Issue: Volume 50:Number 7(2022) Page Start: 2342 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Analysis of Random Variation in Subthreshold FGMOSFET. (28th July 2016) Authors: Banchuin, Rawid Other Names: Liu Jinlong Academic Editor. Journal: Active and passive electronic components Issue: Volume 2016(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Analytical Model of Random Variation in Drain Current of FGMOSFET. (15th July 2015) Authors: Banchuin, Rawid Other Names: Horng Jiun-Wei Academic Editor. Journal: Active and passive electronic components Issue: Volume 2015(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. On the fractional domain generalization of memristive parametric oscillators. Issue 1 (1st January 2019) Authors: Banchuin, Rawid Editors: Konofaos, Nikos Journal: Cogent engineering Issue: Volume 6:Issue 1(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. The modified alpha power law based model of statistical fluctuation in nanometer FGMOSFET. Issue 1 (1st January 2018) Authors: Banchuin, Rawid Editors: Jaikla, Winai Journal: Cogent engineering Issue: Volume 5:Issue 1(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Novel Complete Probabilistic Models of Random Variation in High Frequency Performance of Nanoscale MOSFET. (14th March 2013) Authors: Banchuin, Rawid Other Names: Van der Spiegel Jan Academic Editor. Journal: Journal of electrical and computer engineering Issue: Volume 2013(2013) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. On the Dimensional Consistency Aware Fractional Domain Generalization of Simplest Chaotic Circuits. (19th March 2020) Authors: Banchuin, Rawid Other Names: Muñoz-Pacheco Jesus M. Guest Editor. Journal: Mathematical problems in engineering Issue: Volume 2020(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Novel expressions for time domain responses of fractance device. Issue 1 (1st January 2017) Authors: Banchuin, Rawid Editors: Meng, Wei Journal: Cogent engineering Issue: Volume 4:Issue 1(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗