Novel Complete Probabilistic Models of Random Variation in High Frequency Performance of Nanoscale MOSFET. (14th March 2013)

• Record Type: Journal Article
• Authors: Banchuin, Rawid
• Other Names: Van der Spiegel Jan Academic Editor.
• Is Part Of: Journal of electrical and computer engineering. Volume 2013(2013)
• Publication Date: 2013-03-14
• Subjects: Computer engineering -- Periodicals; Electrical engineering -- Periodicals; 621.3905
• DOI: 10.1155/2013/189436
• Languages: English
• ISSNs: 2090-0147

Abstract

Abstract : The novel probabilistic models of the random variations in nanoscale MOSFET's high frequency performance defined in terms of gate capacitance and transition frequency have been proposed. As the transition frequency variation has also been considered, the proposed models are considered as complete unlike the previous one which take only the gate capacitance variation into account. The proposed models have been found to be both analytic and physical level oriented as they are the precise mathematical expressions in terms of physical parameters. Since the up-to-date model of variation in MOSFET's characteristic induced by physical level fluctuation has been used, part of the proposed models for gate capacitance is more accurate and physical level oriented than its predecessor. The proposed models have been verified based on the 65 nm CMOS technology by using the Monte-Carlo SPICE simulations of benchmark circuits and Kolmogorov-Smirnov tests as highly accurate since they fit the Monte-Carlo-based analysis results with 99% confidence. Hence, these novel models have been found to be versatile for the statistical/variability aware analysis/design of nanoscale MOSFET-based analog/mixed signal circuits and systems.