1. Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics. (January 2015) Authors: Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan Journal: Solid-state electronics Issue: Volume 103(2015) Page Start: 127 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. TCAD-based design and verification of the components of a 200 V GaN-IC platform. (February 2023) Authors: Vudumula, Pavan; Cosnier, Thibault; Syshchyk, Olga; Bakeroot, Benoit; Decoutere, Stefaan Journal: Solid-state electronics Issue: Volume 200(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗