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Author/Creator Bakeroot, Benoit

1. Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics. (January 2015)

Authors:
Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan
Journal:
Solid-state electronics
Issue:
Volume 103(2015)
Page Start:
127
Record Type:
Journal Article
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2. Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy. Issue 23 (29th July 2021)

Authors:
Hsu, Po-Chun; Simoen, Eddy; Liang, Hu; De Jaeger, Brice; Bakeroot, Benoit; Wellekens, Dirk; Decoutere, Stefaan
Other Names:
Brehm Moritz guestEditor.; Springholz Gunther guestEditor.
Journal:
Physica status solidi
Issue:
Volume 218:Issue 23(2021)
Page Start:
n/a
Record Type:
Journal Article
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3. Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability. (July 2022)

Authors:
Gallardo, Jethro Oroceo; Dash, Sachidananda; Tran, Thanh Nga; Huang, Zhen-Hong; Tang, Shun-Wei; Wellekens, Dirk; Bakeroot, Benoit; Syshchyk, Olga; De Jaeger, Brice; Decoutere, Stefaan; Wu, Tian-Li
Journal:
Microelectronics and reliability
Issue:
Volume 134(2022)
Page Start:
Record Type:
Journal Article
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4. Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers. Issue 5 (2nd May 2016)

Authors:
Hu, Jie; Stoffels, Steve; Lenci, Silvia; You, Shuzhen; Bakeroot, Benoit; Ronchi, Nicolò; Venegas, Rafael; Groeseneken, Guido; Decoutere, Stefaan
Journal:
Physica status solidi
Issue:
Volume 213:Issue 5(2016:May)
Page Start:
1229
Record Type:
Journal Article
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5. Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices. (5th February 2020)

Authors:
Borga, Matteo; Mukherjee, Kalparupa; De Santi, Carlo; Stoffels, Steve; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Journal:
Applied physics express
Issue:
Volume 13:Number 2(2020)
Page Start:
Record Type:
Journal Article
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