1. 3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs. Issue 9 (August 2015) Authors: Munteanu, D.; Autran, J.L. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1522 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. ASTEP (2005–2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure. Issue 9 (August 2015) Authors: Autran, J.L.; Munteanu, D.; Moindjie, S.; Saoud, T. Saad; Sauze, S.; Gasiot, G.; Roche, P. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1506 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Basic single-event mechanisms in Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons. (November 2021) Authors: Munteanu, D.; Moindjie, S.; Autran, J.L. Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Electronics reliability assessment of future power fusion machines: Neutron interaction analysis in bulk silicon. (November 2021) Authors: Autran, J.L.; Munteanu, D. Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors. (December 2016) Authors: Essa, Z.; Pelletier, B.; Morin, P.; Boulenc, P.; Pakfar, A.; Tavernier, C.; Wacquant, F.; Zechner, C.; Juhel, M.; Autran, J.L.; Cristiano, F. Journal: Solid-state electronics Issue: Volume 126(2016) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors. (December 2016) Authors: Essa, Z.; Pelletier, B.; Morin, P.; Boulenc, P.; Pakfar, A.; Tavernier, C.; Wacquant, F.; Zechner, C.; Juhel, M.; Autran, J.L.; Cristiano, F. Journal: Solid-state electronics Issue: Volume 126(2016) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Modelling and simulation of SEU in bulk Si and Ge SRAM. (September 2019) Authors: Moindjie, S.; Munteanu, D.; Autran, J.L. Journal: Microelectronics and reliability Issue: Volume 100/101(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs. (September 2017) Authors: Moindjie, S.; Autran, J.L.; Munteanu, D.; Gasiot, G.; Roche, P. Journal: Microelectronics and reliability Issue: Volume 76/77(2017) Page Start: 53 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Natural radiation events in CCD imagers at ground level. (September 2016) Authors: Saad Saoud, T.; Moindjie, S.; Munteanu, D.; Autran, J.L. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 68 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Natural radiation events in CCD imagers at ground level. (September 2016) Authors: Saad Saoud, T.; Moindjie, S.; Munteanu, D.; Autran, J.L. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 68 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗