1. Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions. (September 2018) Authors: Aguiar, Y.Q.; Wrobel, F.; Autran, J.-L.; Leroux, P.; Saigné, F.; Touboul, A.D.; Pouget, V. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 920 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Comparing analytical and Monte-Carlo-based simulation methods for logic gates SET sensitivity evaluation. (November 2020) Authors: Schvittz, R.B.; Aguiar, Y.Q.; Wrobel, F.; Autran, J.-L.; Rosa, L.S.; Butzen, P.F. Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Design exploration of majority voter architectures based on the signal probability for TMR strategy optimization in space applications. (November 2020) Authors: Aguiar, Y.Q.; Wrobel, F.; Autran, J.-L.; Leroux, P.; Saigné, F.; Pouget, V.; Touboul, A.D. Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Radiation hardening efficiency of gate sizing and transistor stacking based on standard cells. (September 2019) Authors: Aguiar, Y.Q.; Wrobel, F.; Guagliardo, S.; Autran, J.-L.; Leroux, P.; Saigné, F.; Touboul, A.D.; Pouget, V. Journal: Microelectronics and reliability Issue: Volume 100/101(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Reliability-driven pin assignment optimization to improve in-orbit soft-error rate. (November 2020) Authors: Aguiar, Y.Q.; Wrobel, F.; Autran, J.-L.; Leroux, P.; Saigné, F.; Pouget, V.; Touboul, A.D. Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Single-Event Latchup sensitivity: Temperature effects and the role of the collected charge. (April 2021) Authors: Guagliardo, S.; Wrobel, F.; Aguiar, Y.Q.; Autran, J.-L.; Leroux, P.; Saigné, F.; Pouget, V.; Touboul, A.D. Journal: Microelectronics and reliability Issue: Volume 119(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗