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Author/Creator Asubar, Joel T.

2. AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors with high on/off current ratio of over 5 × 1010 achieved by ozone pretreatment and using ozone oxidant for Al2O3 gate insulator. (11th November 2016)

Authors:
Tokuda, Hirokuni; Asubar, Joel T.; Kuzuhara, Masaaki
Journal:
Japanese journal of applied physics
Issue:
Volume 55:Number 12(2016:Dec.)
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Record Type:
Journal Article
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5. Enhancement‐Mode AlGaN/GaN Vertical Trench Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors with a High Drain Current Fabricated Using the AlGaN Regrowth Technique. Issue 7 (25th November 2019)

Authors:
Yamamoto, Akio; Kanatani, Keito; Yoneda, Norifumi; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki
Other Names:
Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor.
Journal:
Physica status solidi
Issue:
Volume 217:Issue 7(2020)
Page Start:
n/a
Record Type:
Journal Article
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6. Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex situ regrown AlGaN layer. (22nd September 2022)

Authors:
Baratov, Ali; Kawabata, Shinsaku; Urano, Shun; Nagase, Itsuki; Ishiguro, Masaki; Maeda, Shogo; Igarashi, Takahiro; Nezu, Toi; Yatabe, Zenji; Matys, Maciej; Kachi, Tetsu; Adamowicz, Boguslawa; Wakejima, Akio; Kuzuhara, Masaaki; Yamamoto, Akio; Asubar, Joel T.
Journal:
Applied physics express
Issue:
Volume 15:Number 10(2022)
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Record Type:
Journal Article
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7. GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique. (16th February 2021)

Authors:
Low, Rui Shan; Asubar, Joel T.; Baratov, Ali; Kamiya, Shunsuke; Nagase, Itsuki; Urano, Shun; Kawabata, Shinsaku; Tokuda, Hirokuni; Kuzuhara, Masaaki; Nakamura, Yusui; Naito, Kenta; Motoyama, Tomohiro; Yatabe, Zenji
Journal:
Applied physics express
Issue:
Volume 14:Number 3(2021)
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Record Type:
Journal Article
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