Analytical derivation of charge relaxation time distribution in transistor from current noise spectrum using inverse integral transformation method. (21st February 2018)

• Record Type: Journal Article
• Authors: Yatabe, Zenji; Inoue, Shinya; Asubar, Joel T.; Kasai, Seiya
• Is Part Of: Applied physics express. Volume 11:Number 3(2018)
• Publication Date: 2018-02-21
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.11.031201
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: An analytical technique is proposed to reveal the relaxation time distribution of dynamic charge events using the current noise spectrum of a transistor, by applying an inverse integral transformation to the McWhorter model. In the proposed method, the continuous relaxation-time distribution function G (τ) can be analytically derived from the noise spectra S (ω) without a spectrum deconvolution. The feasibility of the proposed method is demonstrated by characterizing the charge dynamics of tetraphenylporphyrin molecules dispersed on the surface of a GaAs-based nanowire field-effect transistor. Our analysis successfully verified the time constant of the molecule-related dynamic charge events and effects of photo-excitation.