1. Distinction between silicon and oxide traps using single‐trap spectroscopy. Issue 3 (10th February 2015) Authors: Fang, Wen; Simoen, Eddy; Aoulaiche, Marc; Luo, Jun; Zhao, Chao; Claeys, Cor Journal: Physica status solidi Issue: Volume 212:Issue 3(2015:Mar.) Page Start: 512 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Increase in Oxide Trap Density Due to the Implementation of High-k and Al2O3 Cap Layers in Thick-Oxide Input-Output Transistors for DRAM Applications. (14th September 2015) Authors: Simoen, Eddy; Ritzenthaler, Romain; Cho, Moon Ju; Schram, Tom; Horiguchi, Naoto; Aoulaiche, Marc; Spessot, Alessio; Fazan, Pierre; Claeys, Cor Journal: ECS transactions Issue: Volume 69:Number 10(2015) Page Start: 281 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs. (September 2015) Authors: Fang 方, Wen 雯; Simoen, Eddy; Chikang, Li; Aoulaiche, Marc; Luo 罗, Jun 军; Zhao 赵, Chao 超; Claeys, Cor Journal: Journal of semiconductors Issue: Volume 36:Number 9(2015:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Towards single‐trap spectroscopy: Generation‐recombination noise in UTBOX SOI nMOSFETs. Issue 3 (23rd January 2015) Authors: Simoen, Eddy; Cretu, Bogdan; Fang, Wen; Aoulaiche, Marc; Routoure, Jean‐Marc; Carin, Regis; dos Santos, Sara; Luo, Jun; Zhao, Chao; Martino, Joao Antonio; Claeys, Cor Journal: Physica status solidi Issue: Volume 12:Issue 3(2015:Mar.) Page Start: 292 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗