1. Changes of electronic properties of AlGaN/GaN HEMTs by surface treatment. Issue 1736 (18th December 2014) Authors: Kaplar, R.; Meneghesso, G.; Ozpineci, B.; Takeuchi, T.; Pletschen, W.; Linkohr, St.; Kirste, L.; Cimalla, V.; Müller, S.; Himmerlich, M.; Krischok, S.; Ambacher, O. Journal: MRS proceedings Issue: Issue 1736:(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Changes of electronic properties of AlGaN/GaN HEMTs by surface treatment. Issue 1736 (18th December 2014) Authors: Pletschen, W.; Linkohr, St.; Kirste, L.; Cimalla, V.; Müller, S.; Himmerlich, M.; Krischok, S.; Ambacher, O. Editors: Kaplar, R.; Meneghesso, G.; Ozpineci, B.; Takeuchi, T. Journal: MRS proceedings Issue: Issue 1736:(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Complex interaction of passive multiport structures and their description by separate discrete models. Issue 1 (1st January 2016) Authors: Ohlrogge, M.; Tessmann, A.; Leuther, A.; Schlechtweg, M.; Ambacher, O. Journal: Electronics letters Issue: Volume 52:Issue 1(2016) Page Start: 52 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Dynamic Detection of Target-DNA with AlGaN/GaN High Electron Mobility Transistors. (2015) Authors: Espinosa, N.; Schwarz, S.U.; Cimalla, V.; Podolska, A.; Ambacher, O. Journal: Procedia engineering Issue: Volume 120(2015) Page Start: 908 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Dynamic Detection of Target-DNA with AlGaN/GaN High Electron Mobility Transistors. (2015) Authors: Espinosa, N.; Schwarz, S.U.; Cimalla, V.; Podolska, A.; Ambacher, O. Journal: Procedia engineering Issue: Volume 120(2015) Page Start: 908 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Excitons and exciton‐phonon coupling in the optical response of GaN. Issue 2 (20th January 2014) Authors: Shokhovets, S.; Bärwolf, F.; Gobsch, G.; Runge, E.; Köhler, K.; Ambacher, O. Journal: Physica status solidi Issue: Volume 11:Issue 2(2014:Feb.) Page Start: 297 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Impedance Characterization of DNA-functionalization Layers on AlGaN/GaN High Electron Mobility Transistors. (2015) Authors: Espinosa, N.; Schwarz, S.U.; Cimalla, V.; Podolska, A.; Ambacher, O. Journal: Procedia engineering Issue: Volume 120(2015) Page Start: 912 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Impedance Characterization of DNA-functionalization Layers on AlGaN/GaN High Electron Mobility Transistors. (2015) Authors: Espinosa, N.; Schwarz, S.U.; Cimalla, V.; Podolska, A.; Ambacher, O. Journal: Procedia engineering Issue: Volume 120(2015) Page Start: 912 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Interaction of indium oxide nanoparticle film surfaces with ozone, oxygen and water. Issue 3 (18th January 2016) Authors: Himmerlich, M.; Eisenhardt, A.; Berthold, T.; Wang, Ch. Y.; Cimalla, V.; Ambacher, O.; Krischok, S. Other Names: Reith Heiko guestEditor.; Nielsch Kornelius guestEditor. Journal: Physica status solidi Issue: Volume 213:Issue 3(2016:Mar.) Page Start: 831 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. On the determination of noise parameters of low‐noise transistor devices. (4th February 2015) Authors: Seelmann‐Eggebert, M.; Aja, B.; Baldischweiler, B.; Moschetti, G.; Massler, H.; Bruch, D.; Schlechtweg, M.; Ambacher, O.; Caddemi, Alina; Caddemi, Ernesto Journal: International journal of numerical modelling Issue: Volume 28:Number 6(2015:Nov./Dec.) Page Start: 684 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗