Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations. (June 2023)

• Record Type: Journal Article
• Authors: Kriekouki, Ioanna; Beaudoin, Félix; Philippopoulos, Pericles; Zhou, Chenyi; Camirand Lemyre, Julien; Rochette, Sophie; Rohrbacher, Claude; Mir, Salvador; Barragan, Manuel J.; Pioro-Ladrière, Michel; Galy, Philippe
• Is Part Of: Solid-state electronics. Volume 204(2023)
• Publication Date: 2023-06
• Subjects: Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2023.108626
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Quantum dot device fabricated with industry-standard manufacturing methods. Prediction of performance of an FD-SOI quantum dot device at cryogenic temperatures. Quantum dot device modeling using the 3D Quantum TCAD software. Numerical and experimental observation of side-gate activated corner dots in FD-SOI. Coulomb blockade simulations and measurements in FD-SOI. QTCAD simulations exploring single-electron quantum dot occupancy in FD-SOI. Abstract: Single electrons trapped in quantum dots hosted in silicon nanostructures are a promising platform for the implementation of quantum technologies. In this study, we investigated the required conditions to attain the single-electron regime in an Ultra-Thin Body and Buried oxide (UTBB) Fully Depleted Silicon-On-Insulator (FD-SOI) quantum dot device fabricated using the standard manufacturing process of STMicroelectronics. The cryogenic temperature operation of the quantum dot device is simulated and analyzed using the 3D Quantum Technology Computer Aided Design (QTCAD) software developed by Nanoacademic Technologies, achieving convergence down to 1.4 K. We report here simulations exploring single-electron occupancy of a single side-gate activated corner quantum dot and compare them to experimental data collected from the measurements on a device with the same geometry.