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APA Citation
Hult, B., Thorsell, M., Chen, J., & Rorsman, N. (2023). investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in "Buffer‐Free" AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors. Physica status solidi, 220(8), n/a. http://access.bl.uk/ark:/81055/vdc_100184743859.0x00001a