Bi-polysilicon passivating contact technique for crystalline silicon solar cell. (15th June 2023)

• Record Type: Journal Article
• Authors: Kim, Sungheon; Jeong, Sungjin; Kim, Hongrae; Khokhar, Muhammad Quddamah; Dhungel, Suresh Kumar; Dao, Vinh-Ai; Pham, Duy Phong; Kim, Youngkuk; Yi, Junsin
• Is Part Of: Materials science in semiconductor processing. Volume 160(2023)
• Publication Date: 2023-06-15
• Subjects: Polysilicon materials -- Tunnelling oxide passivating contact -- Crystalline silicon solar cells -- Carrier selective contact; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2023.107453
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Polysilicon (poly-Si) passivating contacts overcome the direct metal–semiconductor contact drawback of traditional industrial crystalline silicon (c-Si) solar cells by inserting a layer stack of poly-Si and silicon oxide layers at the rear full-area metal/c-Si interface, which is well-known as a tunnel oxide passivating contact (TOPCon). In conventional industrial TOPCon devices, the direct contact problem affects the emitter, which deteriorates the passivation quality and suppresses the open-circuit voltage (Voc ). We herein introduce an innovative bi-poly-Si technique (Bi-TOPCon) featuring rear full-area passivated poly-Si and emitter locally passivated poly-Si to improve the passivation quality of the TOPCon device. The local emitter poly-Si is introduced using metal mask alignment, and its properties are optimised toward high passivation quality and low contact resistance. The Bi-TOPCon device shows a significant improvement in Voc (Voc > 700 mV). Bi-TOPCon is a promising technology for high-efficiency, next-generation industrial TOPCon devices.