Cite
HARVARD Citation
Kang, C. et al. (2023). A steep-switching impact ionization-based threshold switching field-effect transistor. Nanoscale. 15 (12), pp. 5771-5777. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Kang, C. et al. (2023). A steep-switching impact ionization-based threshold switching field-effect transistor. Nanoscale. 15 (12), pp. 5771-5777. [Online].