Cite
HARVARD Citation
Baskaran, S. et al. (2023). Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications. IETE journal of research. 69 (3), pp. 1222-1232. [Online].
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Baskaran, S. et al. (2023). Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications. IETE journal of research. 69 (3), pp. 1222-1232. [Online].