Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications. Issue 3 (3rd April 2023)

• Record Type: Journal Article
• Authors: Baskaran, S.; Saravana Kumar, R.; Saminathan, V.; Poornachandran, R.; Mohan Kumar, N.; Janakiraman, V.
• Is Part Of: IETE journal of research. Volume 69:Issue 3(2023)
• Page Start: 1222
• Page End: 1232
• Publication Date: 2023-04-03
• Subjects: DG-MOS-HEMT -- 2DEG -- Heterostructure -- HfO2 -- InAs channel -- Quantum well; Electronics -- Periodicals; Telecommunication -- Periodicals; Electronics; Telecommunication; Periodicals; 621.38
• DOI: 10.1080/03772063.2021.1929517
• Languages: English
• ISSNs: 0377-2063

Abstract

ABSTRACT: In this work, the impact of high-K and gate-to-drain spacing ( Lgd ) in InAs-based double-gate metal oxide semiconductor high-electron-mobility transistor (DG-MOS-HEMT) is analyzed for low-loss and high-frequency applications using 2D Sentaurus TCAD simulation. In this device, HfO2 is utilized as the dielectric material and that offers a reduced leakage current. The device with small gate-to-drain spacing ( Lgd ) gives an exquisite device operation in enhancement mode (E-mode) operation with a positive threshold voltage ( VT ) of 0.1223 V, the high drain current ( Ids, sat ) of 1.38 mA/µm, transconductance ( gm ) of 1.59 ms/µm, and sub-threshold slope ( SS ) of 75 mV/dec is achieved. These superior properties in this device show a high cut-off frequency ( fT ) of 547 GHz and the maximum oscillation frequency of ( fmax ) of 740 GHz. The numerical device simulation results show that DG-MOS-HEMT with HfO2 as dielectric offers a remarkable control of leakage current and makes it suitable for low-power, low-noise, and high-frequency applications.