Effect of stress on fluorite-structured ferroelectric thin films for semiconductor devices. (15th June 2023)

• Record Type: Journal Article
• Authors: Lee, Younghwan; Jeong, Hyun Woo; Kim, Se Hyun; Yang, Kun; Park, Min Hyuk
• Is Part Of: Materials science in semiconductor processing. Volume 160(2023)
• Publication Date: 2023-06-15
• Subjects: Fluorite-structured ferroelectric -- Thin film -- Stress -- Strain -- Multistack -- Semiconductor device; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2023.107411
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Ferroelectricity, i.e., the characteristic of polar crystals whose spontaneous polarization can be reversed by the application of an appropriate electric field, originates from the formation of a crystallographic phase with noncentrosymmetry and is widely exploited in numerous devices. In particular, fluorite-structured ferroelectrics (FFs) are promising components of semiconductor devices and are typically present as components of complicated multistacks containing electrodes and semiconductors. Given that the formation of the ferroelectric phase and the magnitude of its spontaneous polarization are mainly affected by the lattice distortion or sub-unit-cell displacement of ions, the ferroelectricity of FF thin films formed during device fabrication should be strongly influenced by their stress/strain state. Thus, a deep understanding of the stress/strain states of these films and their effects on material properties and device performances is required; however, this topic has not yet been extensively reviewed despite its significance and important reports related to stress/strain effects. To fill this gap, we herein discuss the mechanisms of stress/strain development in FF thin films and their impacts on material properties and device performances based on fundamental thin-film mechanics and relevant theoretical and experimental studies. Graphical abstract: Image 1 Highlights: Origin of stress/strain in fluorite-structured ferroelectric thin films is reviewed. Impact of stress/strain on film properties & related device performance is discussed. Fundamentals of thin-film mechanics & theoretical/experimental works are highlighted. Limitations of existing analysis methods and future research directions are presented.