Interface engineering in two-dimensional heterostructures towards novel emitters. (1st January 2023)
- Record Type:
- Journal Article
- Title:
- Interface engineering in two-dimensional heterostructures towards novel emitters. (1st January 2023)
- Main Title:
- Interface engineering in two-dimensional heterostructures towards novel emitters
- Authors:
- Li, Hua
Ling, Jinyang
Lin, Jiamin
Lu, Xin
Xu, Weigao - Abstract:
- Abstract: Two-dimensional (2D) semiconductors have captured broad interest as light emitters, due to their unique excitonic effects. These layer-blocks can be integrated through van der Waals assembly, i.e., fabricating homo- or heterojunctions, which show novel emission properties caused by interface engineering. In this review, we will first give an overview of the basic strategies that have been employed in interface engineering, including changing components, adjusting interlayer gap, and tuning twist angle. By modifying the interfacial factors, novel emission properties of emerging excitons are unveiled and discussed. Generally, well-tailored interfacial energy transfer and charge transfer within a 2D heterostructure cause static modulation of the brightness of intralayer excitons. As a special case, dynamically correlated dual-color emission in weakly-coupled bilayers will be introduced, which originates from intermittent interlayer charge transfer. For homobilayers and type Ⅱ heterobilayers, interlayer excitons with electrons and holes residing in neighboring layers are another important topic in this review. Moreover, the overlap of two crystal lattices forms moiré patterns with a relatively large period, taking effect on intralayer and interlayer excitons. Particularly, theoretical and experimental progresses on spatially modulated moiré excitons with ultra-sharp linewidth and quantum emission properties will be highlighted. Moiré quantum emitter provides uniformAbstract: Two-dimensional (2D) semiconductors have captured broad interest as light emitters, due to their unique excitonic effects. These layer-blocks can be integrated through van der Waals assembly, i.e., fabricating homo- or heterojunctions, which show novel emission properties caused by interface engineering. In this review, we will first give an overview of the basic strategies that have been employed in interface engineering, including changing components, adjusting interlayer gap, and tuning twist angle. By modifying the interfacial factors, novel emission properties of emerging excitons are unveiled and discussed. Generally, well-tailored interfacial energy transfer and charge transfer within a 2D heterostructure cause static modulation of the brightness of intralayer excitons. As a special case, dynamically correlated dual-color emission in weakly-coupled bilayers will be introduced, which originates from intermittent interlayer charge transfer. For homobilayers and type Ⅱ heterobilayers, interlayer excitons with electrons and holes residing in neighboring layers are another important topic in this review. Moreover, the overlap of two crystal lattices forms moiré patterns with a relatively large period, taking effect on intralayer and interlayer excitons. Particularly, theoretical and experimental progresses on spatially modulated moiré excitons with ultra-sharp linewidth and quantum emission properties will be highlighted. Moiré quantum emitter provides uniform and integratable arrays of single photon emitters that are previously inaccessible, which is essential in quantum many-body simulation and quantum information processing. Benefiting from the optically addressable spin and valley indices, 2D heterostructures have become an indispensable platform for investigating exciton physics, designing and integrating novel concept emitters. … (more)
- Is Part Of:
- Journal of semiconductors. Volume 44:Number 1(2023)
- Journal:
- Journal of semiconductors
- Issue:
- Volume 44:Number 1(2023)
- Issue Display:
- Volume 44, Issue 1 (2023)
- Year:
- 2023
- Volume:
- 44
- Issue:
- 1
- Issue Sort Value:
- 2023-0044-0001-0000
- Page Start:
- Page End:
- Publication Date:
- 2023-01-01
- Subjects:
- van der Waals assembly -- interface interaction -- interlayer gap -- twist angle -- intralayer and interlayer excitons -- moiré excitons
Semiconductors -- Periodicals
621.38152 - Journal URLs:
- http://iopscience.iop.org/1674-4926/ ↗
http://www.iop.org/EJ/journal/jos ↗
http://www.iop.org/ ↗ - DOI:
- 10.1088/1674-4926/44/1/011001 ↗
- Languages:
- English
- ISSNs:
- 1674-4926
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
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