Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond. (December 2020)

• Record Type: Journal Article
• Authors: Zhou, Rui; Yu, Cui; Zhou, Chuangjie; Guo, Jianchao; He, Zezhao; Wang, Yanfeng; Qiu, Feng; Wang, Hongxing; Cai, Shujun; Feng, Zhihong
• Is Part Of: Journal of semiconductors. Volume 41:Number 12(2020)
• Publication Date: 2020-12
• Subjects: diamond -- transistor -- trap -- defect -- power density; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/41/12/122801
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: In this work, we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra, pulsed I – V characteristics analysis, and radio frequency performances measurements. It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density. Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors. This work should be helpful for further performance improvement of the microwave power diamond devices.