Cite
MLA Citation
Guang Yang et al.. “Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits.” Journal of semiconductors, vol. 43, 2022, p. . http://access.bl.uk/ark:/81055/vdc_100173229942.0x00000b
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Guang Yang et al.. “Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits.” Journal of semiconductors, vol. 43, 2022, p. . http://access.bl.uk/ark:/81055/vdc_100173229942.0x00000b