Cite
HARVARD Citation
Yang, G. et al. (2022). Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits. Journal of semiconductors. p. . [Online].
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Yang, G. et al. (2022). Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits. Journal of semiconductors. p. . [Online].