Cite
APA Citation
Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., Sierakowski, K., Kamler, G., Boćkowski, M., Kohn, E., Sitar, Z., Collazo, R., & Pavlidis, S. (2023). schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor. Applied physics express, 16, . http://access.bl.uk/ark:/81055/vdc_100182834239.0x000004