Cite
HARVARD Citation
Stein, S. et al. (2023). Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor. Applied physics express. p. . [Online].
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Stein, S. et al. (2023). Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor. Applied physics express. p. . [Online].