Facile fabrication of Cu2O nanowire networks with large Seebeck coefficient for application in flexible thermoelectrics. (1st June 2023)

• Record Type: Journal Article
• Authors: Sondors, Raitis; Gavars, Davis; Sarakovskis, Anatolijs; Kons, Artis; Buks, Krisjanis; Erts, Donats; Andzane, Jana
• Is Part Of: Materials science in semiconductor processing. Volume 159(2023)
• Publication Date: 2023-06-01
• Subjects: Copper oxide -- Nanowire network -- Flexible thermoelectrics -- Thermal oxidation -- Facile fabrication -- Large seebeck coefficient; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2023.107391
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The development of thermoelectrical nanowires and nanowire networks is crucial for application in self-powered electronics and flexible heat-to-power conversion devices. While Cu2 O is a perspective p-type thermoelectric material, its research is mostly focused on the investigation of the properties of thin films or rigid cement composites with Cu2 O powder fillers. In this work, Cu2 O nanowire networks were fabricated by a simple technique and their thermoelectrical properties were investigated for the first time. Cu2 O nanowire networks were obtained by annealing prefabricated CuO nanowire networks in an inert atmosphere at low pressure of 0.2 Torr. After annealing, nanowire networks showed a complete transition of CuO phase to Cu2 O. Seebeck coefficient of Cu2 O nanowire networks reached 2000 μV K −1 . The estimated power factor of the Cu2 O networks was found to be comparable with the Seebeck coefficient values of the state-of-the-art Cu2 O thin films. The demonstrated in this work simple low-cost method for the fabrication of Cu2 O nanowire networks illustrates the potential of this material for further applications in flexible thermoelectric devices.