Cite

    Zhu, X., Shao, S., Chan, S., Tu, J., Ota, K., Huang, Y., An, K., Chen, L., Wei, J., Liu, J., Li, C., & Kawarada, H. (2023). high Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond. Advanced Electronic Materials, 9, n/a. http://access.bl.uk/ark:/81055/vdc_100180905928.0x00000f