Cite
HARVARD Citation
Zhu, X. et al. (2023). High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond. Advanced Electronic Materials. p. n/a. [Online].
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Zhu, X. et al. (2023). High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond. Advanced Electronic Materials. p. n/a. [Online].