Switching limits of top-gated carbon nanotube field-effect transistors. (April 2023)

• Record Type: Journal Article
• Authors: Sanchez-Soares, A.; Gilardi, C.; Lin, Q.; Kelly, T.; Su, S.-K.; Fagas, G.; Greer, J.C.; Pitner, G.; Chen, E.
• Is Part Of: Solid-state electronics. Volume 202(2023)
• Publication Date: 2023-04
• Subjects: NEGF -- MOSFET -- Carbon nanotubes; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2023.108624
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: The performance limits of carbon nanotube field-effect transistors (CNFETs) based on a recently reported process are studied by computational techniques at temperatures between 300 K and 4 K. The impact of band-to-band tunneling (BTBT) and source-to-drain tunneling (SDT) is examined for devices with varying gate length through the use of simulations based on the non-equilibrium Green's function (NEGF) formalism, and calibrated to measurements. Additionally, the case of junctionless chemical doping profiles is analyzed in contrast to electrostatic doping recently reported for test structures. The switching limits of CNFETs are further explored for devices based on carbon nanotubes (CNTs) with more favorable electronic structures. Highlights: Efficient quantum simulations are validated against electrical measurements of CNFETs Switching limits at short gate lengths and low temperatures are explored A solid-state doping model is compared to measured electrostatically doped devices Variations in switching metrics by varying carbon nanotubes diameter are analyzed