Improved RF power performance of AlGaN/GaN HEMT on silicon with planar distributed channel. (April 2023)

• Record Type: Journal Article
• Authors: Chen, Jingxiong; Qin, Jian; Ma, Xiao; Wang, Hong
• Is Part Of: Solid-state electronics. Volume 202(2023)
• Publication Date: 2023-04
• Subjects: AlGaN/GaN HEMT on silicon -- Planar isolation -- Channel temperature -- RF power performance; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2023.108619
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Decreased channel temperature and improved RF power performance in planar distributed channel device. Planar distributed channel is realized by standard ion implantation, which is compatible with device isolation. Simulation and experimental results support each other very well. Abstract: AlGaN/GaN HEMTs with planar distributed channel were fabricated on a silicon substrate. With a standard ion implantation isolation process, the area between the ohmic contacts was divided into conductive and non-conductive regions. Compared to a conventional HEMT, simulations and experimental results indicate the decreased channel temperature and improved RF power performance in the distributed channel device, while there is no significant degradation in small signal characteristics. The fabricated multi-finger distributed channel devices with 0.65-mm gate periphery demonstrated a decrease in channel temperature from 186 °C to 162 °C, accompanied by a 15.6 % increase (from 3.2 W/mm to 3.7 W/mm) in output power density, and an 8 % increase (from 42.0 % to 50.0 %) in drain efficiency at 3.5 GHz.