Impact of thermal coupling effects on the digital and analog figures of merit of UTBB SOI MOSFET pairs. (April 2023)

• Record Type: Journal Article
• Authors: Vanbrabant, Martin; Raskin, Jean-Pierre; Flandre, Denis; Kilchytska, Valeriya
• Is Part Of: Solid-state electronics. Volume 202(2023)
• Publication Date: 2023-04
• Subjects: FD-SOI -- UTBB -- Thermal-coupling -- Self-heating -- Harmonic distortion; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2023.108623
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Thermal coupling effects between side-by-side UTBB FD-SOI nFETs. Heat originated from a neighbor device operation degrades device characteristics. Digital and analog figures of merit degraded by this temperature rise. Abstract: This work studies the thermal cross-coupling between two side-by-side UTBB (ultra-thin body and ultra-thin BOX) fully-depleted Silicon-on-Insulator (FD-SOI) MOSFETs. Due to the operation (i.e. heating) of the neighbor (actuator) device, the temperature of the measured device increases, which deteriorates its electrical parameters. This degradation is studied as a function of the bias applied to (i.e. power dissipated by) the neighbor device on main digital (SS, VTh and Ion /Ioff ) and analog (gm, gm /Id and Av ) Figures of Merit as well as the 2nd and 3rd order harmonic distortions (HD2 and HD3 ).