Holding time effect on mechanical properties and protrusion behaviors of through silicon via copper under various annealing processes. (May 2023)

• Record Type: Journal Article
• Authors: Zhang, Min; Qin, Fei; Chen, Si; Dai, Yanwei; Jin, Yifan; Chen, Pei; An, Tong; Gong, Yanpeng
• Is Part Of: Materials science in semiconductor processing. Volume 158(2023)
• Publication Date: 2023-05
• Subjects: Through Silicon Via copper (TSV-Cu) -- Stress-strain constitutive curve -- Protrusion -- Annealing -- Microstructure; MEMS Micro-Electro-Mechanical Systems -- CMOS Complementary Metal-Oxide-Semiconductor; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2023.107353
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The thermomechanical reliabilities of TSV based structures are closely affected by the protrusion deformation, stress-strain constitutive behavior and microstructure evolution of TSV-Cu under various thermal loadings. In this study, the stress-strain constitutive curves of TSV-Cu under various annealing conditions considering holding time effect are acquired by the nanoindentation test and finite element (FE) reverse analysis. The yielding softening in stress-strain curves is found if the holding time is less than 90 min. However, the stable stress-strain curves are obtained as holding time exceeds 90 min. Furthermore, the mechanisms of softening and stability in stress-strain curves are revealed by observing the microstructure evolution of TSV-Cu with a wide range of holding time. In addition, the relationships among protrusion height, constitutive curves as well as microstructure parameter of TSV-Cu with different annealing holding time are built. This study provides an intrinsic insight on the correlations of deformation, constitutive curves, and microstructure for TSV-Cu annealing processes considering holding time effect. Graphical abstract: Image 1