Cite
MLA Citation
F. Nagano et al.. “Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance.” ECS journal of solid state science and technology, vol. 12, 2023, p. . http://access.bl.uk/ark:/81055/vdc_100179734741.0x000009