Thickness dependence of resistive switching characteristics of the sol–gel processed Y2O3 RRAM devices. (23rd February 2023)

• Record Type: Journal Article
• Authors: Kim, Kyoungdu; Kim, Hae-In; Lee, Taehun; Lee, Won-Yong; Bae, Jin-Hyuk; Kang, In Man; Lee, Sin-Hyung; Kim, Kwangeun; Jang, Jaewon
• Is Part Of: Semiconductor science and technology. Volume 38:Number 4(2023)
• Publication Date: 2023-02-23
• Subjects: sol–gel -- Y2O3 -- thickness -- oxygen vacancy -- RRAM; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/acbb99
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In this study, yttrium oxide (Y2 O3 )-based resistive random-access memory (RRAM) devices were fabricated using the sol–gel method. The fabricated Y2 O3 RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require a forming process. The Y2 O3 film thickness was controlled by varying the liquid-phase precursor concentration. As the concentration increased, thicker Y2 O3 films were formed. In addition, the concentration of oxygen vacancies increased. The RRAM device properties were not observed for thin Y2 O3 films, which had the lowest oxygen vacancy concentration. Moreover, RRAM devices, which consisted of the thickest Y2 O3 films with the largest oxygen vacancy concentration, showed poor non-volatile properties. The optimized Y2 O3 -based RRAM devices with a thickness of 37 nm showed conventional bipolar RRAM device characteristics, which did not require an initial forming process. The fabricated RRAM devices showed a high resistance state to low resistance state ratio of over 10 4, less than +1.5 V of SET voltage, and −15.0 V of RESET voltage. The RRAM devices also showed promising non-volatile memory properties, without significant degradation after 10 3 s retention and 10 2 cycle endurance tests.