A novel ferroelectric nanopillar multi-level cell memory. (February 2023)

• Record Type: Journal Article
• Authors: Lee, Hyeongu; Shin, Mincheol
• Is Part Of: Solid-state electronics. Volume 200(2023)
• Publication Date: 2023-02
• Subjects: Multi-level cell -- Ferroelectric topological state -- Time-dependent Ginzburg–Landau -- Ferroelectric nanopillar; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2022.108535
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: In this work, we present a novel multi-level non-volatile memory (NVM) device where ferroelectric (FE) nanopillars are embedded in a dielectric (DE) medium. Using our in-house 3D phase field simulator developed to treat the FE–DE composite system stably, we demonstrate that n FE nanopillars can generate more than 2 n states, enabling high storage capacity. The multistates of the pillar array device are attributed to the depolarization field modulation with the pillar height and the multi-domain topological states of nanoscale FE structures. Highlights: n -ferroelectric nanopillars embedded in dielectric medium can show more than 2 n states. Depolarization field engineering by modulating the pillar height results in multi-level switching. Long-range Coulomb interaction between the nanopillars affects the accessible topological states.