A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications. (March 2023)
- Record Type:
- Journal Article
- Title:
- A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications. (March 2023)
- Main Title:
- A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications
- Authors:
- Mukherjee, Adrija
Debnath, Papiya
Nirmal, D.
Chanda, Manash - Abstract:
- Abstract: In this paper, the workability of a Negative Capacitance (NC)-Double Gate (DG) Tunnel FET (NC-DGTFET) for digital logic circuit implementation has been detailed. New analytical modelling of the drain current of the NC-DGTEFT considering the band to band tunneling (BTBT), Band tail tunneling (BTT) and Source drain tunneling (SDT) have been investigated. Significant IOÑ 0.025 μA/μm at 250 mV and SS∼12mv/dec - 22mv/dec with very low IOFF (∼fA/μm) is observed with the optimized device. SILVACO ATLAS and MATLAB have been used to validate the proposed model. The modeled NC-DGTFET based Inverter, NAND/NOR has been implemented and the power, delay propagation, and the power delay product (PDP) of the circuit have been analyzed to show the energy efficacy of the NC-DGTFET in the sub-threshold regime (STR) with respect to baseline TFET (B-TFET). To evaluate the impact of the Miller's effects on the digital performances, NC-DGTFET-based five stages Inverter with Fanout = 1 is considered a device under test (DUT) here. Peak overshoot voltage and delay for different fanout and ferroelectric thickness are detailed to show the efficacy of the proposed logic circuits in sub-threshold regime. Both the cross talk and the Miller effects are mitigated significantly in the NC-DGTFET-based digital circuits.
- Is Part Of:
- Microelectronics journal. Volume 133(2023)
- Journal:
- Microelectronics journal
- Issue:
- Volume 133(2023)
- Issue Display:
- Volume 133, Issue 2023 (2023)
- Year:
- 2023
- Volume:
- 133
- Issue:
- 2023
- Issue Sort Value:
- 2023-0133-2023-0000
- Page Start:
- Page End:
- Publication Date:
- 2023-03
- Subjects:
- Negative capacitance -- TFET -- Double gate -- Sub-threshold slope -- Power delay product -- Miller effects -- Cross talk
Microelectronics -- Periodicals
Microélectronique -- Périodiques
Microelectronics
Electronic journals
Journals - contents and abstracts
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621.3805 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/5877621.html ↗
http://www.sciencedirect.com/science/journal/00262692 ↗
http://www.intute.ac.uk/sciences/cgi-bin/fullrecord.pl?handle=lesa.1012319367 ↗
http://www.elsevier.com/journals ↗
http://www.elsevier.com/homepage/elecserv.htt ↗ - DOI:
- 10.1016/j.mejo.2023.105689 ↗
- Languages:
- English
- ISSNs:
- 0959-8324
- Deposit Type:
- Legaldeposit
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- Available online (eLD content is only available in our Reading Rooms) ↗
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- British Library DSC - 5758.973000
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